1. Overview of Equipment and Application Fields

The CVD-1400℃ Chemical Vapor Deposition Tubular Furnace is a high-end experimental device designed for extreme high-temperature processes, specifically engineered for synthesizing advanced materials with high melting points and exceptional stability. Its core heating element utilizes high-quality molybdenum silicon (MoSi₂) rods, capable of stable long-term operation at 1400°C and short-term operation up to 1500°C. This system is widely applied in the growth of hard ceramic thin films such as silicon carbide (SiC), boron nitride (BN), and titanium carbide (TiC), as well as high-quality graphene, carbon nanotubes, and various wide-bandgap semiconductor materials. The dual-temperature-zone independent temperature control design enables precise decoupling and regulation of the precursor evaporation and high-temperature reaction deposition processes, making it an ideal platform for cutting-edge research and small-scale prototyping in universities, research institutions, and new material enterprises.

2. Core Functional Highlights

· The 1400℃ ultra-high temperature dual-zone temperature control system features top-grade imported or domestic silicon-molybdenum rod heating elements with oxidation resistance and extended service life. Equipped with an independent dual-zone PID intelligent temperature control module, both zones can independently set temperatures from room temperature to 1400℃ with ±1℃ precision. Users can flexibly configure temperature gradients—for example, precisely controlling the sublimation rate of high-melting-point precursors in the front zone while providing an ultra-high-temperature reaction environment in the rear zone to promote crystal growth. This system is particularly suitable for chemical reactions requiring extremely high temperatures.

· High-Temperature Reactor Chamber Selection: For environments exceeding 1400°C, the chamber offers two options: high-purity quartz tubes (short-term tolerance) or high-purity corundum tubes (99.8% Al₂O₃) (long-term tolerance). Corundum tubes demonstrate exceptional heat and corrosion resistance, completely eliminating metal contamination to ensure the purity of films produced under extreme conditions. The flange is designed with special heat-resistant stainless steel and integrated with a water-cooling system, ensuring reliable sealing and safe operation.

· Precision Multi-Channel Gas Delivery and Mixing System. This integrated system features 4-8 high-purity gas pipelines, each equipped with a high-precision mass flow controller (MFC) that delivers a wide flow control range, rapid response, and ±1% F.S. accuracy. It supports precise ratios of various reaction gases (e.g., SiH₄, CH₄, NH₃, H₂), carrier gases (Ar, N₂), and doping gases. The unique pre-mixing chamber design with bypass exhaust ensures uniform gas mixing before entering the high-temperature zone and prevents drastic pressure fluctuations in the reaction chamber during gas path switching.

· The system features wide-range vacuum and pressure self-adaptation, supporting multiple process modes including atmospheric pressure CVD (APCVD), low-pressure CVD (LPCVD), and ultra-high vacuum CVD (requiring molecular pump). It is equipped with a high-performance rotary vane mechanical pump, achieving an ultimate vacuum of 5×10⁻³ Pa (upgradable to 10⁻⁵ Pa with optional turbo molecular pump). The system incorporates a high-precision capacitive film gauge to monitor and feedback control the reaction chamber pressure in real time, providing an optimal thermodynamic environment for nucleation and growth of various materials.

· Intelligent Security Protection and Rapid Cooling

o Multi-layer safety protection: Features include over-temperature alarm with automatic power-off, cooling water flow monitoring (water cut-off for heating), overcurrent protection, leakage current protection, and gas leak alarm.

o The rapid cooling system: A high-power forced air cooling system can be optionally equipped to rapidly reduce the furnace temperature after the reaction, effectively "freezing" the crystal structure at high temperatures to prevent grain coarsening or adverse phase transformations, which is particularly critical for the preparation of nanoscale materials.

o Intelligent control: Featuring a PLC-based central control system and a large-size color touchscreen, it supports programming of over 30 temperature curves, with real-time monitoring of temperature, vacuum level, gas flow rate, and other parameters, and provides data export and analysis capabilities.

3. Technical Parameters and Specifications

4. Typical Application Scenarios

· The SiC thin film is grown by the reaction of silicon and carbon gas sources at high temperature.

· Boron Nitride (BN) nanomaterials: Synthesis of hexagonal boron nitride (h-BN) single-layer or multilayer films as ideal substrates or encapsulation layers for two-dimensional electronic devices.

· High-quality graphene preparation: Growing large-area, low-defect single-layer graphene on copper or nickel foils requires high temperatures to facilitate carbon atom diffusion and rearrangement.

· Hard protective coatings: deposition of superhard coatings such as titanium carbide (TiC) and titanium nitride (TiN) to enhance the wear resistance of tools or molds.

· Wide bandgap semiconductor research: Growth of zinc oxide (ZnO) and gallium nitride (GaN) nanowires and thin films for ultraviolet detection and light-emitting devices.

· Ceramic matrix composites: research on the surface coating of carbon fiber or the densification of ceramic matrix.

5. Why choose the 1400℃ CVD system?

The CVD-1400℃ chemical vapor deposition tube furnace has overcome technical bottlenecks in high-melting-point material preparation through its exceptional ultra-high-temperature stability and precise dual-temperature zone control. The silicon-molybdenum rod heating element ensures long-term operational reliability, while the corundum tube reaction chamber provides a contamination-free growth environment. Whether exploring new superhard materials or optimizing third-generation semiconductor processes, this system delivers exceptional process control and data reproducibility. With intelligent operation and comprehensive safety features, it has become an indispensable research tool for high-level laboratories, enabling breakthrough progress in material science under extreme conditions.